Product Specification www.jmnic.com 2SC3873 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High VCBO ・High speed switching ・Good linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A ICM Collector current-peak 22 A IB Base current 5 A PC Collector power dissipation TC=25℃ 100 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SC3873 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA;IB=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A 1.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=7A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 400 UNIT V 30 MHz Switching times ton Turn-on time tstg Storage time tf IC=7A; VCC=150V IB1=1.4A;IB2=-2.8A Fall time JMnic 0.7 μs 2.0 μs 0.3 μs Product Specification www.jmnic.com 2SC3873 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic