Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Complement to type 2SA1452 ﹒Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage 80 VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Collector current 12 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature TO-220Fa -55~150 Electrical Characteristics Tc=25 SYMBOL ICBO PARAMETER Collector cut-off current CONDITIONS VCB=80V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 VCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 IC=50mA; IB=0 MIN 10 uA 0.4 Forward current transfer ratio IC=6A; VCE=1V 40 VBE(sat-1) Base-emitter saturation voltages IC=6A; IB=0.3A VBE(sat-2) Base-emitter saturation voltages V 240 1.2 V Transition frepuency IC=1A; VCE=5V 80 MHz Collector Out put Capacitance VCB=10V;f=1MHz 220 pF hFE-1 Classifications O 70-140 UNIT uA V IC=6A; IB=0.3A 70 fT MAX 10 80 IC=1A; VCE=1V Cob Typ. Y 120-240 JMnic