Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒High speed ,power switching applications Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TO-220Fa Electrical Characteristics Tc=25℃ SYMBOL ICBO PARAMETER Collector cut-off current CONDITIONS VCB=60V; IE=0 VEB=5V; IC=0 IEBO Emitter cut-off current ICEO Collector cut-off current VCBO Collector-base breakdown voltage VCEO(SUS) VEBO Collector-emitter Sustaining voltage Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio VBE(sat)2 fT Cob Typ. MAX 10 UNIT uA 10 uA 60 V Emitter-base breakdown voltage VCE(sat-1) VBE(sat)1 IC=30mA; IB=0 MIN Base-emitter saturation voltages IC=8A; IB=0.4A IC=2A; VCE=2V 0.5 100 V 400 IC=8A; IB=0.4A 1.5 V Base-emitter saturation voltages Transition frepuency IC=1A; VCE=10V 140 MHz Collector Out put Capacitance IC=0, VCB=10V f=1MHz 150 pF JMnic