JMnic Product Specification 2SB1145 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain. ・DARLINGTON ・Low collector saturation voltage APPLICATIONS ・For high current driver and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector dissipation TC=25℃ 20 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1145 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-100μA; IE=0 -120 V V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1.5A ; IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-120V;IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V 2 2000 JMnic Product Specification 2SB1145 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3