JMNIC 2SB1145

JMnic
Product Specification
2SB1145
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・High DC current gain.
・DARLINGTON
・Low collector saturation voltage
APPLICATIONS
・For high current driver and power
driver applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector dissipation
TC=25℃
20
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1145
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-100μA; IE=0
-120
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA; IB=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ; IB=-3mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-1.5A ; IB=-3mA
-2.0
V
ICBO
Collector cut-off current
VCB=-120V;IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-1.5A ; VCE=-3V
2
2000
JMnic
Product Specification
2SB1145
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3