JMnic Product Specification 2SC2774 Silicon NPN Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation ・High current capability APPLICATIONS ・For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 17 A IB Base current 5 A PC Collector power dissipation 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC2774 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 300 pF fT Transition frequency IC=2A ; VCE=12V 20 MHz VCEsat CONDITIONS hFE classifications O Y 50-100 70-140 2 MIN TYP. 50 MAX UNIT 140 JMnic Product Specification 2SC2774 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3