JMNIC 2SD2015

Product Specification
www.jmnic.com
2SD2015
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・DARLINGTON
APPLICATIONS
・Driver for solenoid
・Relay and motor
・General purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
4
A
0.5
A
25
W
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD2015
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=2mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=2mA
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
mA
hFE
DC current gain
IC=2A ; VCE=2V
Transition frequency
IC=0.1A ; VCE=12V
40
MHz
Collector output capacitance
f=1MHz;VCB=10V
40
pF
0.6
μs
5.0
μs
2.0
μs
fT
COB
CONDITIONS
MIN
TYP.
MAX
120
UNIT
V
2000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A IB1=-IB2=10mA
VCC=40V ,RL=20Ω
JMnic
Product Specification
www.jmnic.com
2SD2015
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
JMnic