JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION ・With TO-220F package ・Complement to type 2SD2495 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -110 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1626 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-5mA -3.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V 100 MHz Collector output capacitance f=1MHz;VCB=-10V 110 pF 1.1 μs 3.2 μs 1.1 μs fT COB CONDITIONS MIN TYP. MAX -110 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6Ω hFE Classifications O p Y 5000-12000 6500-20000 15000-30000 2 JMnic Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1626