JMnic Product Specification 2SC5271 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package APPLICATIONS ・For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC5271 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.5A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=2.5A ; VCE=2V 10 hFE-2 DC current gain IC=1mA ; VCE=2V 15 fT Transition frequency IE=-0.5A ; VCE=12V 10 MHz COB Output capacitance VCB=10V;f=1MHz 45 pF 200 UNIT V 30 Switching times ton Turn-on time tstg Storage time tf IC=2.5A;IB1=0.5A;IB2=-1.0A RL=60Ω;VCC=150V Fall time 2 0.3 μs 1.0 μs 0.1 μs JMnic Product Specification 2SC5271 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3