JMNIC 2SA1746

JMnic
Product Specification
2SA1746
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3PML package
・Low collector saturation voltage
APPLICATIONS
・For chopper regulator,switch and
general purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-12
A
ICM
Collector current-peak
-20
A
IB
Base current
-4
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
1
JMnic
Product Specification
2SA1746
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5 A;IB=-80m A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-5 A;IB=-80m A
-1.2
V
ICBO
Collector cut-off current
VCB=-70V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
μA
hFE
DC current gain
IC=-5A ; VCE=-1V
fT
Transition frequency
IC=-1A ; VCE=-12V
25
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
400
pF
0.5
μs
0.6
μs
0.3
μs
-50
UNIT
V
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=4Ω
IB1=-IB2=-80mA
VCC=-20V
2
JMnic
Product Specification
2SA1746
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA1746
Silicon PNP Power Transistors
4