JMnic Product Specification 2SA1746 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Low collector saturation voltage APPLICATIONS ・For chopper regulator,switch and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A ICM Collector current-peak -20 A IB Base current -4 A PC Collector power dissipation 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ 1 JMnic Product Specification 2SA1746 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-80m A -0.5 V VBEsat Base-emitter saturation voltage IC=-5 A;IB=-80m A -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-5A ; VCE=-1V fT Transition frequency IC=-1A ; VCE=-12V 25 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 400 pF 0.5 μs 0.6 μs 0.3 μs -50 UNIT V 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=4Ω IB1=-IB2=-80mA VCC=-20V 2 JMnic Product Specification 2SA1746 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA1746 Silicon PNP Power Transistors 4