JMnic Product Specification 2SC4300 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PC Collector power dissipation 75 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC4300 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=2A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 6 MHz COB Output capacitance VCB=10V;f=1MHz 75 pF 800 UNIT V 10 30 Switching times ton Turn-on time tstg Storage time tf IC=2A;IB1=0.3A;IB2=-1A; RL=125Ω;VCC=250V Fall time 2 1 μs 5 μs 1 μs JMnic Product Specification 2SC4300 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC4300 Silicon NPN Power Transistors 4