Product Specification www.jmnic.com 2SD2093 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・DARLINGTON ・Complement to type 2SB1388 ・High DC current gain ・Low saturation voltage ・Large current capacity and large ASO APPLICATIONS ・Motor drivers ・Printer hammer drivers ・Relay drivers, ・Voltage regulator control PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collectorl power dissipation TC=25℃ 45 W 3.0 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ jh Product Specification www.jmnic.com 2SD2093 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEsat Collector-emitter saturation voltage IC=5A;IB=10m A VBEsat Base-emitter saturation voltage IC=5A;IB=10m A VCEO(BR) Collector-emitter breakdown voltage IC=5mA;IB=0 110 V VCBO(BR) Collector-base breakdown voltage IC=50mA;RBE=∞ 100 V IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA hFE DC current gain IC=5 A ; VCE=3V Transition frequency IC=5 A ; VCE=5V fT 0.9 UNIT V 2.0 1500 V 4000 20 MHz 0.6 μs 4.8 μs 1.6 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=-IB2=10mA VCC=50V ,RL=10Ω 2 Product Specification www.jmnic.com 2SD2093 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3