JMnic Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -10 A ICM Collector current-peak -15 A PC Collector dissipation TC=25℃ 30 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1225 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -60 V VCEsat Collector-emitter saturation voltage IC=-5A ; IB=-10mA VBEsat Base-emitter saturation voltage ICBO -1.0 -1.5 V IC=-5A ; IB=-10mA -2.0 V Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-5A ; VCE=-2V 2000 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4Ω 2 0.5 μs 1.5 μs 1.7 μs JMnic Product Specification 2SB1225 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3