JMNIC 2SB1225

JMnic
Product Specification
2SB1225
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1827
・High DC current gain.
・Large current capacity and wide ASO.
・Low saturation voltage.
・DARLINGTON
APPLICATIONS
・Suitable for use in control of motor drivers,
printer hammer drivers, relay drivers, and
constant-voltage regulators.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-10
A
ICM
Collector current-peak
-15
A
PC
Collector dissipation
TC=25℃
30
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1225
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-60
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ; IB=-10mA
VBEsat
Base-emitter saturation voltage
ICBO
-1.0
-1.5
V
IC=-5A ; IB=-10mA
-2.0
V
Collector cut-off current
VCB=-40V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-5A ; VCE=-2V
2000
5000
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=0.01A
-IB2=0.01A
VCC=20V ,RL=4Ω
2
0.5
μs
1.5
μs
1.7
μs
JMnic
Product Specification
2SB1225
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3