Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 DESCRIPTION ・With TO-220 package ・High DC current gain. ・High current capacity and wide ASO. ・Low saturation voltage. APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 12 A PC Collector power dissipation 1.75 W TC=25℃ 40 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1196 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCBO Collector-base breakdown voltage IC=5mA ; IE=0 110 V VCEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V VCEsat Collector-emitter saturation voltage IC=4A, IB=8mA VBEsat Base-emitter saturation voltage ICBO 1.5 V IC=4A, IB=8mA 2.0 V Collector cut-offcurrent VCB=80V;IE=0 0.1 mA IEBO Emitter cut-offcurrent VEB=5V;IC=0 3.0 mA hFE DC current gain IC=4A ; VCE=3V Transition frequency IC=4A ; VCE=5V fT 0.9 1500 4000 20 MHz Switching times ton Turn-on time tstg Storage time tf IC=500IB1=-500IB2=4A VCC=50V;RL=12.5Ω; Fall time JMnic 0.6 μs 4.8 μs 1.6 μs Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic