JMNIC 2SD1196

Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1196
DESCRIPTION
・With TO-220 package
・High DC current gain.
・High current capacity and wide ASO.
・Low saturation voltage.
APPLICATIONS
・Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
110
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICM
Collector current-peak
12
A
PC
Collector power dissipation
1.75
W
TC=25℃
40
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD1196
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCBO
Collector-base breakdown voltage
IC=5mA ; IE=0
110
V
VCEO
Collector-emitter breakdown voltage
IC=50mA ;RBE=∞
100
V
VCEsat
Collector-emitter saturation voltage
IC=4A, IB=8mA
VBEsat
Base-emitter saturation voltage
ICBO
1.5
V
IC=4A, IB=8mA
2.0
V
Collector cut-offcurrent
VCB=80V;IE=0
0.1
mA
IEBO
Emitter cut-offcurrent
VEB=5V;IC=0
3.0
mA
hFE
DC current gain
IC=4A ; VCE=3V
Transition frequency
IC=4A ; VCE=5V
fT
0.9
1500
4000
20
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=500IB1=-500IB2=4A
VCC=50V;RL=12.5Ω;
Fall time
JMnic
0.6
μs
4.8
μs
1.6
μs
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1196
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic