SavantIC Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD1825 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A ICM Collector current-peak -6 A PC Collector dissipation TC=25 20 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=@ -60 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA VBEsat Base-emitter saturation voltage ICBO -1.5 V IC=-2A ; IB=-4mA -2.0 V Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-2V Transition frequency IC=-2A ; VCE=-5V fT -1.0 2000 5000 20 MHz 0.5 µs 1.4 µs 1.2 µs Switching times ton Turn-on time tstg Storage time tf IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10D Fall time 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1223