SAVANTIC 2SB1223

SavantIC Semiconductor
Product Specification
2SB1223
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1825
·High DC current gain.
·Large current capacity and wide ASO.
·DARLINGTON
APPLICATIONS
·Suitable for use in control of motor drivers,
printer hammer drivers,and constant-voltage
regulators.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-4
A
ICM
Collector current-peak
-6
A
PC
Collector dissipation
TC=25
20
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1223
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=@
-60
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ; IB=-4mA
VBEsat
Base-emitter saturation voltage
ICBO
-1.5
V
IC=-2A ; IB=-4mA
-2.0
V
Collector cut-off current
VCB=-40V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-2A ; VCE=-2V
Transition frequency
IC=-2A ; VCE=-5V
fT
-1.0
2000
5000
20
MHz
0.5
µs
1.4
µs
1.2
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=500IB1=-500IB2=-2A
VCC=-20V ,RL=10D
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1223