JMnic Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector dissipation TC=25℃ 20 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1226 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -110 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -100 V VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA VBEsat Base-emitter saturation voltage ICBO -1.5 V IC=-1.5A ; IB=-3mA -2.0 V Collector cut-off current VCB=-80V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V Transition frequency IC=-1.5A ; VCE=-5V fT -1.0 1500 4000 20 MHz 0.7 μs 2.4 μs 1.2 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=500IB1=-500IB2=-1A VCC=-50V ,RL=50Ω 2 JMnic Product Specification 2SB1226 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3