JMNIC 2SB1226

JMnic
Product Specification
2SB1226
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1828
・High DC current gain.
・Large current capacity and wide ASO.
・DARLINGTON
APPLICATIONS
・Motor drivers,printer hammer drivers,relay
drivers,voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector dissipation
TC=25℃
20
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1226
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-110
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-100
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ; IB=-3mA
VBEsat
Base-emitter saturation voltage
ICBO
-1.5
V
IC=-1.5A ; IB=-3mA
-2.0
V
Collector cut-off current
VCB=-80V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-1.5A ; VCE=-3V
Transition frequency
IC=-1.5A ; VCE=-5V
fT
-1.0
1500
4000
20
MHz
0.7
μs
2.4
μs
1.2
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=500IB1=-500IB2=-1A
VCC=-50V ,RL=50Ω
2
JMnic
Product Specification
2SB1226
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3