Product Specification www.jmnic.com 2SD798 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・High voltage ・With TO-220 package APPLICATIONS ・With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter Fig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD798 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH VCEsat Collector-emitter saturation voltage IC=4A IB=0.04A 2.0 V VBEsat Emitter-base saturation voltage IC=4A IB=0.04A 2.5 V ICBO Collector cut-off current VCB=600V IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE-1 DC current gain IC=2A ; VCE=2V 1500 hFE-2 DC current gain IC=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;VCB=50V JMnic 300 UNIT V 35 pF Product Specification Silicon www.jmnic.com Power 2SD798 PACKAGE OUTLINE Fig.2 Outline dimensions JMnic Transistors