JMnic Product Specification 2SB668 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB668 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.0 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-8mA -2.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 μA ICEO Collector cut-off current VCE=-100V, IB=0 -500 μA IEBO Emitter cut-off current VEB=-5V, IC=0 -2 mA hFE DC current gain IC=-1A ; VCE=-3V 2 MIN 2000 TYP. MAX UNIT JMnic Product Specification 2SB668 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3