JMNIC BUL52B

Product Specification
www.jmnic.com
BUL52B
Silicon Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage
・Fast switching
・High energy rating
APPLICATIONS
・Designed for use in
electronic ballast applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
emitter
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
12
A
IB
Base current
4
A
100
W
-55~150
℃
Ptot
Total power dissipation
Tstg
Storage temperature
TC=25℃
JMnic
Product Specification
www.jmnic.com
BUL52B
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
800
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=1mA ;IC=0
10
V
VCEsat-1
Collector-emitter saturation voltage
IC=0.1A IB=20mA
0.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A IB=0.2A
0.2
V
VCEsat-3
Collector-emitter saturation voltage
IC=2A IB=0.4A
0.3
V
VCEsat-4
Collector-emitter saturation voltage
IC=3A IB=0.6A
0.5
V
VBEsat-1
Emitter-base saturation voltage
IC=1A IB=0.2A
1.0
V
VBEsat-2
Emitter-base saturation voltage
IC=2A IB=0.4A
1.1
V
VBEsat-3
Emitter-base saturation voltage
IC=3A IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=800V IE=0
TC=125℃
10
100
μA
ICEO
Collector cut-off current
VCE=400V IB=0
100
μA
IEBO
Emitter cut-off current
VEB=9V IC=0
TC=125℃
10
100
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
15
hFE-3
DC current gain
IC=3A ; VCE=1V
TC=125℃
10
5
fT
Transition frequency
IC=0.2A ; VCE=4V
20
MHz
Cob
Output capacitance
VCB=20V ;f=1MHz
40
pF
JMnic
45
Product Specification
www.jmnic.com
BUL52B
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
JMnic