Product Specification www.jmnic.com BUL52B Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICM Collector current-Peak 12 A IB Base current 4 A 100 W -55~150 ℃ Ptot Total power dissipation Tstg Storage temperature TC=25℃ JMnic Product Specification www.jmnic.com BUL52B Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 800 V V(BR)EBO Emitter-base breakdwon voltage IE=1mA ;IC=0 10 V VCEsat-1 Collector-emitter saturation voltage IC=0.1A IB=20mA 0.1 V VCEsat-2 Collector-emitter saturation voltage IC=1A IB=0.2A 0.2 V VCEsat-3 Collector-emitter saturation voltage IC=2A IB=0.4A 0.3 V VCEsat-4 Collector-emitter saturation voltage IC=3A IB=0.6A 0.5 V VBEsat-1 Emitter-base saturation voltage IC=1A IB=0.2A 1.0 V VBEsat-2 Emitter-base saturation voltage IC=2A IB=0.4A 1.1 V VBEsat-3 Emitter-base saturation voltage IC=3A IB=0.6A 1.2 V ICBO Collector cut-off current VCB=800V IE=0 TC=125℃ 10 100 μA ICEO Collector cut-off current VCE=400V IB=0 100 μA IEBO Emitter cut-off current VEB=9V IC=0 TC=125℃ 10 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 15 hFE-3 DC current gain IC=3A ; VCE=1V TC=125℃ 10 5 fT Transition frequency IC=0.2A ; VCE=4V 20 MHz Cob Output capacitance VCB=20V ;f=1MHz 40 pF JMnic 45 Product Specification www.jmnic.com BUL52B Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic