Product Specification www.jmnic.com 2SC3691 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Large current ,high speed ・Low saturation voltage APPLICATIONS ・Designed for high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-peak 10 A IB Base current 2.5 A PT Total power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Product Specification www.jmnic.com 2SC3691 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=3A; IB=0.3A,L=1mH VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.15 A 0.3 VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=0.2A 0.5 VBEsat-1 Base-emitter saturation voltage IC=3A; IB=0.15 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=4A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 10 μA ICEX Collector cut-off current VCE=60V; VBE=-1.5V Ta=125℃ 10 1.0 μA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 100 hFE-2 DC current gain IC=1A ; VCE=2V 100 hFE-3 DC current gain IC=3A ; VCE=2V 60 COB Output capacitance IE=0; VCB=10V;f=1MHz 70 pF fT Transition frequency IC=0.5A ; VCE=10V 150 MHz 60 UNIT V 200 V V 400 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A;RL=17Ω IB1=-IB2=0.15A VCC≈50V hFE-2 classifications M L K 100-200 150-300 200-400 2 0.3 μs 1.5 μs 0.3 μs Product Specification www.jmnic.com 2SC3691 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3