JMNIC 2SC3691

Product Specification
www.jmnic.com
2SC3691
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Large current ,high speed
・Low saturation voltage
APPLICATIONS
・Designed for high speed and power
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
5
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
PT
Total power dissipation
Ta=25℃
2
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Product Specification
www.jmnic.com
2SC3691
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=3A; IB=0.3A,L=1mH
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.15 A
0.3
VCEsat-2
Collector-emitter saturation voltage
IC=4A; IB=0.2A
0.5
VBEsat-1
Base-emitter saturation voltage
IC=3A; IB=0.15 A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=4A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
μA
ICEX
Collector cut-off current
VCE=60V; VBE=-1.5V
Ta=125℃
10
1.0
μA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
100
hFE-2
DC current gain
IC=1A ; VCE=2V
100
hFE-3
DC current gain
IC=3A ; VCE=2V
60
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
70
pF
fT
Transition frequency
IC=0.5A ; VCE=10V
150
MHz
60
UNIT
V
200
V
V
400
Switching times
ton
‹
Turn-on time
ts
Storage time
tf
Fall time
IC=3A;RL=17Ω
IB1=-IB2=0.15A
VCC≈50V
hFE-2 classifications
M
L
K
100-200
150-300
200-400
2
0.3
μs
1.5
μs
0.3
μs
Product Specification
www.jmnic.com
2SC3691
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3