JMnic Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICM Collector current-Peak -10 A IB Base current (DC) -2 A PT Total power dissipation Ta=25℃ 0.1 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1658 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-1A; IB=-50mA -0.15 V VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-100mA -0.25 V VCEsat-3 Collector-emitter saturation voltage IC=-4A; IB=-200mA -0.5 V Base-emitter saturation voltage IC=-1A; IB=-100mA -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 μA hFE-1 DC current gain IC=-1A ; VCE=-2V 150 hFE-2 DC current gain IC=-4A ; VCE=-2V 50 Transition frequency IC=-50mA ; VCE=-10V 95 MHz Collector output capacitance IE=0;f=1MHz ; VCB=-10V 100 pF VBEsat fT COB CONDITIONS 2 MIN TYP. MAX -30 UNIT V 600 JMnic Product Specification 2SB1658 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3