SEMICONDUCTOR KTC3423 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATION. A B D C E FEATURES F High Breakdown Voltage : VCEO=150V(Min.). Low Output Capacitance : Cob=5.0pF(Max.). G High Transition Frequency : fT=120MHz(Typ.). H Complementary to KTA1360. DIM A B C D E F G H J K L M N O P J K MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Emitter Current IB 5 mA Collector Power Ta=25 Dissipation Tc=25 L Junction Temperature Storage Temperature Range 1.5 PC Tj 150 Tstg -55 150 CHARACTERISTIC N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE TO-126 W 5 ELECTRICAL CHARACTERISTICS (Ta=25 M MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=150V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(Note) VCE=5V, IC=10mA 70 - 240 Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V fT VCE=30V, IC=10mA - 120 - MHz VCB=10V, IE=0, f=1MHz - 3.5 5.0 pF DC Current Gain Transition Frequency Cob Collector Output Capacitance Note : hFE Classification 2003. 7. 24 O:70 140, Y:120 Revision No : 1 240 1/3 KTC3423 h FE - I C I C - VCE 40 200 150 100 20 I B=50µA 10 0 0 2 4 6 8 10 Ta=100 C Ta=0 C 1 3 5 30 10 50 3 5 30 50 10 100 1 0.5 0 =2 /I B 0 IC =1 =5 /I B I C I C /I B 0.3 0.1 0.05 0.5 3 1 5 10 30 50 VCE(sat) - IC I C - VBE COLLECTOR CURRENT IC (mA) 1 0.5 C 00 Ta=25 C 0.3 1 Ta= Ta=0 C 0.1 0.05 0.03 1 EMITTER Ta=25 C COLLECTOR CURRENT I C (mA) COMMON EMITTER IC /I B =10 3 5 10 30 COLLECTOR CURRENT I C (mA) Revision No : 1 50 100 100 COMMON COLLECTOR CURRENT I C (mA) 2 50 50 100 COMMON EMITTER VCE =5V 40 30 Ta=0 C 1 3 Ta=25 C 100 V 30 VCE(sat) - I C COMMON EMITTER VCE =5V =5 50 Ta=100 C DC CURRENT GAIN h FE CE h FE - I C Ta=25 C 2003. 7. 24 100 COLLECTOR CURRENT I C (mA) 300 0.5 V COLLECTOR-EMITTER VOLTAGE VCE (V) 500 20 0.5 VCE =10V 10 0.5 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 COMMON EMITTER Ta=25 C 300 V =2 30 1k COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 500 COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE 50 0 40 0 00 10 0 30 V CE COLLECTOR CURRENT I C (mA) 50 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 C ib , Cob - V R fT - IC 100 TRANSITION FREQUENCY f T (MHz) COLLECTOR OUTPUT CAPACITANCE Cob (pF) EMITTER INPUT CAPACITANCE C ib (pF) KTC3423 f=1MHz Ta=25 C 50 C ib 30 10 Cob 5 (I C = 0) (I E = 0) 3 1 1 3 5 10 30 50 100 200 500 COMMON EMITTER 300 Ta=25 C VCE =30V 100 50 30 VCE =10V VCE =2V 10 5 0.5 1 3 5 30 50 10 100 COLLECTOR CURRENT I C (mA) REVERSE VOLTAGE VR (V) SAFE OPERATING AREA 300 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 1 160 * SINGLE NONREPETITIVE PULSE Ta=25 C I C MAX. (PULSED) 100 I C MAX. (CONTINUOUS) 50 DC 30 *100 m *300 *1sec OP ER AT IO 10 3 N CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 5 3 5 10 30 50 S m S VCEO MAX. COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 3/3