SEMICONDUCTOR PG05DBTFC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. CATHODE MARK FEATURES 50 Watts peak pulse power (tp=8/20 s) 1 C 2 D Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) B IEC 61000-4-5(Lightning) 5A(tp=8/20 s) A DIM A B C D E F Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 + Protects one I/O or power line. E F Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE APPLICATIONS Cell phone handsets and accessories. TFSC Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking CHARACTERISTIC ) SYMBOL RATING PPK 50 Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 Peak Pulse Power (tp=8/20 s) 2 UNIT 1 6 MAXIMUM RATING (Ta=25 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 5.8 - 7.8 V VRWM=3V - - 70 nA VRWM=5V - - 5 A VR=0V, f=1MHz - 15 - pF IR Reverse Leakage Current CJ Junction Capacitance 2005. 6. 24 ) VBR Reverse Breakdown Voltage Revision No : 2 1 It=1mA 1/1 PG05DBTFC POWER DERATION CURVE NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 110 RATED POWER OR IPP (%) PEAK PULSE POWER P PP (KW) 1K 100 10 1 100 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE DURATION TP (µs) PULSE WAVEFORM PEAK PULSE CURRENT I PP (%) 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2005. 6. 24 Revision No : 2 2/2