SEMICONDUCTOR PG05FBESC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E C 50 Watts peak pulse power (tp=8/20 s) 1 B A Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) 2 IEC 61000-4-5(Lightning) 5A(tp=8/20 s) D F Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. DIM A B C D E F Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. 1. ANODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + 2. ANODE APPLICATIONS Cell phone handsets and accessories. ESC Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT PPK 50 W Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 Peak Pulse Power (tp=8/20 s) 2 5B 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage 1 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 5.8 - 7.8 V VBR Reverse Breakdown Voltage 1 It=1mA Reverse Leakage Current IR VRWM=5V - - 5 A Junction Capacitance CJ VR=0V, f=1MHz - - 60 pF 2006. 11. 8 Revision No : 3 1/2 PG05FBESC NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME POWER DERATION CURVE 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) 1K 100 10 1 100 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE DURATION tp (µs) PULSE WAVEFORM PEAK PULSE CURRENT I PP (%) 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2006. 11. 8 Revision No : 3 2/2