SEMICONDUCTOR PG03DBVSC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. CATHODE MARK FEATURES 50 Watts peak pulse power (tp=8/20 s) C D 1 2 Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) B IEC 61000-4-5(Lightning) 5A(tp=8/20 s) A DIM A B C D E F Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. MILLIMETERS _ 0.05 1.4 + _ 0.05 1.0 + _ 0.05 0.6 + _ 0.03 0.28 + _ 0.05 0.5 + _ 0.03 0.12 + Protects one I/O or power line. E F Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE APPLICATIONS Cell phone handsets and accessories. VSC Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC 2 ) SYMBOL RATING UNIT PPK 50 W Junction Temperature Tj -55 150 Storage Temperature Tstg -55 150 Peak Pulse Power(tp=8/20 ) Reverse Stand-Off Voltage 3B 2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 1 1 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 3.3 V 4.2 - 6.2 V Zener Voltage VZ It=1mA Reverse Leakage Current IR VRWM=3.3V - - 20 A Junction Capacitance CJ VR=0V, f=1MHz - - 25 pF 2007. 9. 10 Revision No : 1 1/2 PG03DBVSC NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME POWER DERATION CURVE 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) 1K 100 10 1 10 100 PULSE DURATION tp (µs) 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT I PP (%) 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2007. 9. 10 Revision No : 1 2/2