SEMICONDUCTOR PG05BSESC TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Transient voltage protection for data lines. IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact). Small package for portable electronics. Suitable replacement for Varistors in ESD protection applications. E C 1 A FEATURES B CATHODE MARK Protection in Portable Electronics Applications. 2 Protects one I/O or power line. D F Low clamping voltage. Low leakage current. DIM A B C D E F APPLICATIONS Cell phone handsets and accessories. 1. ANODE 2. CATHODE MILLIMETERS _ 0.10 1.60 + _ 0.10 1.20 + _ 0.10 0.80 + _ 0.05 0.30 + _ 0.10 0.60 + _ 0.05 0.13 + Microprocessor based equipment. Personal digital assistants (PDA s). Notebooks, desktops, & servers. Portable instrument ESC Pagers peripherals. MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 ) PPK 30 W Peak Pulse Current (tp=8/20 ) IPP 1.6 A Junction Temperature Tj 150 Storage Temperature Tstg -55 150 Marking Type Name D2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 6.65 - 7.45 V VRWM=3.5V - - 0.5 A IPP=1A, tp=8/20 - - 12 V IPP=1.6A, tp=8/20 - - 18 V VBR Reverse Breakdown Voltage Reverse Leakage Current IR Claming Voltage VC It=5mA Series Resistance RS VR=1V, f=900MHz - - 60 Junction Capacitance CJ VR=0V, f=1MHz - - 5.0 2007. 5. 15 Revision No : 1 pF 1/2 PG05BSESC POWER DERATION CURVE 1K 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 100 10 1 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 100 PULSE DURATION tP (µs) 25 50 75 150 CJ - VR 4 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 CAPACITANCE CJ (pF) PEAK PULSE CURRENT IPP (%) 125 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM e -t td=lpp/2 30 20 10 0 0 5 10 15 20 TIME (µs) 2007. 5. 15 100 Revision No : 1 25 30 3 2 1 0 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2/2