Product specification 1PS70SB10; 1PS70SB14 1PS70SB15; 1PS70SB16 Features Low forward voltage Guard ring protected Very small plastic SMD package Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous reverse voltage Conditions Min VR Continuous forward current IF Repetitive peak forward current IFRM Non-repetitive peak forward current IFSM Total power dissipation (per package) Pt ot Storage temperature Tstg Junction temperature tp 1s, ä 0.5 tp < 10 ms Ta mb < 25 Max Unit 30 V 200 mA 300 mA 600 mA 200 mW -65 +150 -65 +125 Tj 125 Operating ambient temperature Ta mb thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min IF = 0.1 mA Continuous forward voltage VF Max Unit 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV 800 mV Reverse current IR V R = 25 V, Note 1 IF = 100 mA 2 15 A Diode capacitance Cd V R = 0 V; f = 1 MHz 10 50 pF Note 1. Pulse test: tp < 300 s; 0.02. Marking Type Marking 1PS70SB10 1PS70SB14 1PS70SB15 1PS70SB16 7*0 http://www.twtysemi.com 7*4 7*5 7*6 [email protected] 4008-318-123 1 of 1