TYSEMI 1PS70SB10

Product specification
1PS70SB10; 1PS70SB14
1PS70SB15; 1PS70SB16
Features
Low forward voltage
Guard ring protected
Very small plastic SMD package
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Continuous reverse voltage
Conditions
Min
VR
Continuous forward current
IF
Repetitive peak forward current
IFRM
Non-repetitive peak forward current
IFSM
Total power dissipation (per package)
Pt ot
Storage temperature
Tstg
Junction temperature
tp
1s, ä
0.5
tp < 10 ms
Ta mb < 25
Max
Unit
30
V
200
mA
300
mA
600
mA
200
mW
-65
+150
-65
+125
Tj
125
Operating ambient temperature
Ta mb
thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
IF = 0.1 mA
Continuous forward voltage
VF
Max
Unit
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
800
mV
Reverse current
IR
V R = 25 V, Note 1
IF = 100 mA
2
15
A
Diode capacitance
Cd
V R = 0 V; f = 1 MHz
10
50
pF
Note
1. Pulse test: tp < 300
s;
0.02.
Marking
Type
Marking
1PS70SB10 1PS70SB14 1PS70SB15 1PS70SB16
7*0
http://www.twtysemi.com
7*4
7*5
7*6
[email protected]
4008-318-123
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