KEXIN 2SC3646

Transistors
SMD Type
High-Voltage Switching Applications
2SC3646
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
1
A
Collector Current (Pulse)
ICP
2
A
PC
500
mW
PC *
1.3
W
Tj
150
Tstg
-55 to +150
Collector Power Dissipation
Jumction temperature
Storage temperature Range
2
* Mounted on ceramic board (250 mm x 0.8 mm)
Electrical Characteristics Ta = 25
Max
Unit
Collector Cut-off Current
Parameter
Symbol
ICBO
VCB = 100V , IE = 0
Testconditons
Min
Typ
100
nA
Emitter Cut-off Current
IEBO
VEB = 4V , IC = 0
100
nA
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10uA , IE = 0
120
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 1mA , RBE =
100
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10uA , IC = 0
DC Current Gain
hFE
VCE = 5V , IC = 100mA
6
V
100
400
Collector-Emitter Saturation Voltage
VCE(sat) IC = 400mA , IB = 40mA
0.2
0.6
Base-Emitter Saturation Voltage
VBE(sat) IC = 400mA , IB = 40mA
0.85
1.2
VCE = 10V , IC = 100mA
120
MHz
VCB = 10V , IE = 0 , f = 1MHz
13
pF
Gain-Bandwidth Product
fT
Collector Output Capacitance
Cob
Turn-On Time
ton
Storage Time
tstg
Fall Time
tf
V
V
80
See Test Circuit.
700
ns
40
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Transistors
SMD Type
2SC3646
Test Circuit
hFE Classification
CB
Marking
Rank
hFE
R
100
S
200
140
Electrical Characteristics Curves
2
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T
280
200
400
Transistors
SMD Type
2SC3646
www.kexin.com.cn
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