Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1 A Collector Current (Pulse) ICP 2 A PC 500 mW PC * 1.3 W Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range 2 * Mounted on ceramic board (250 mm x 0.8 mm) Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter Symbol ICBO VCB = 100V , IE = 0 Testconditons Min Typ 100 nA Emitter Cut-off Current IEBO VEB = 4V , IC = 0 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC = 10uA , IE = 0 120 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA , RBE = 100 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10uA , IC = 0 DC Current Gain hFE VCE = 5V , IC = 100mA 6 V 100 400 Collector-Emitter Saturation Voltage VCE(sat) IC = 400mA , IB = 40mA 0.2 0.6 Base-Emitter Saturation Voltage VBE(sat) IC = 400mA , IB = 40mA 0.85 1.2 VCE = 10V , IC = 100mA 120 MHz VCB = 10V , IE = 0 , f = 1MHz 13 pF Gain-Bandwidth Product fT Collector Output Capacitance Cob Turn-On Time ton Storage Time tstg Fall Time tf V V 80 See Test Circuit. 700 ns 40 www.kexin.com.cn 1 Transistors SMD Type 2SC3646 Test Circuit hFE Classification CB Marking Rank hFE R 100 S 200 140 Electrical Characteristics Curves 2 www.kexin.com.cn T 280 200 400 Transistors SMD Type 2SC3646 www.kexin.com.cn 3