Transistors SMD Type High-Speed Switching Applications 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Current (Pulse) ICP -3 A PC * 1.3 W Collector Dissipation Jumction temperature Storage temperature Range Tj 150 Tstg -55 to +150 * Mounted on ceramic board (250 mm2 x 0.8 mm) Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter ICBO VCB = -40V , IE = 0 -1 ìA Emitter Cut-off Current IEBO VEB = -3V , IC = 0 -1 ìA DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Symbol Testconditons Min VCE = -2V , IC = -100mA 70 VCE = -2V , IC = -1.5A 25 VCE(sat) IC = -800mA , IB = -40mA VBE(sat) IC = -800mA , IB = -40mA Typ 280 -0.3 -0.8 V -0.9 -1.3 V Collector-Base Breakdown Voltage V(BR)CBO IC = -10ìA, IE = 0 -50 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA, RBE = -40 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10ìA, IC = 0 -5 Gain-Bandwidth Product fT Output Capacitance Cob Turn-ON Time ton Storage Time tstg Turn-OFF Time toff V VCE = -2V , IC = -100mA 300 MHz VCB = -10V , f = 1MHz 18 pF See Test Circuit 50 100 ns 120 220 ns 150 300 ns www.kexin.com.cn 1 Transistors SMD Type 2SA1729 Test Circuit hFE Classification AG Marking Rank hFE Q 70 R 140 100 Electrical Characteristics Curves 2 www.kexin.com.cn S 200 140 280 Transistors SMD Type 2SA1729 www.kexin.com.cn 3