Transistors IC SMD Type Low Frequency Transistor 2SA2018 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.15 1.6-0.15 1 +0.05 0.8-0.05 2 A collector current is large +0.01 0.1-0.01 0.55 Features Collector saturation voltage is low. VCE(sat) 250mA at IC=200mA/IB=10mA 0.35 3 +0.25 0.3-0.05 +0.1 0.5-0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V IC 500 mA Collector current ICP * 1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse, Pw=1ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base breakdown voltage VCBO IC=10 Collector-emitter breakdown voltage VCEO IC=1mA Emitter-base breakdown voltage VEBO IE=10 Collector cutoff current ICBO VCB=15V DC current gain hFE VCE=2V, IC=10mA Collector-emitter saturation voltage A A VCE(sat) IC/IB=200mA/10mA Output capacitance Cob Transition frequency fT Min Typ Max Unit 15 V 12 V 6 V 100 270 nA 680 100 250 mV VCB=10V, IE=0A, f=1MHz 6.5 pF VCE=2V, IE=10mA, f=100MHz 260 MHz Marking Marking BW www.kexin.com.cn 1