Transistors SMD Type Power Transistor 2SC3837K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small rbb'.Cc and high gain. (Typ. 6ps) 1 0.55 High transition frequency. (Typ. fT = 1.5GHz) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 18 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA W Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse Pw=100ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=10ìA 30 V Collector-emitter breakdown voltage VCEO IC=1mA 18 V Emitter-base breakdown voltage VEBO IE=10ìA 3 V Collector cutoff current ICBO VCB=20V 0.5 IEBO VEB=10V 0.5 Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC/IB=20mA/4mA DC current gain hFE Collector-base time constant VCE=10V, IC=10mA 0.5 56 rbb'.Cc VCB = 10V , IC = 10mA , f = 31.8MHz 6 NF VCE=12V,IC=2mA,f=200MHz,Rg=50 4.5 Output capacitance * Cob VCB=10V, IE=0, f=1MHz 0.9 Transition frequency fT 600 A V 180 Noise factor VCE=10V, IE= 10mA, f=200MHz A 1500 13 ps dB 1.5 pF MHz * Measured using pulse current. hFE Classification Marking ACN ACP Rank N P hFE 56 120 82 180 www.kexin.com.cn www.kesenes.com 1