Transistors SMD Type Medium Power Transistor 2SA1036K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE(sat). Ideal for low-voltage operation. 0.4 3 Large IC. ICMax. = -500mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current * IC -0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector * PC max. must not be exceeded. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = -100 ìA -40 V Collector-emitter breakdown voltage VCEO IC = -1 mA -32 V Emitter-base breakdown voltage VEBO IE = -100 ìA -5 V Collector cutoff current ICBO VCB = -20 V -1 Emitter cutoff current IEBO VEB = -4 V -1 Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -10 mA DC current gain hFE VCE = -3 V, IC = -10mA Output capacitance Cob VCB = -10 V, IE = 0A, f = 1MHz Transition frequency fT VCE = -5 V, IE = 20 mA, f = 100MHz -0.4 82 A A V 390 7 pF 200 MHz hFE Classification Marking HP Rank hFE HQ P 82 180 HR Q 120 R 270 180 390 www.kexin.com.cn 1