KEXIN 2SD2098

Transistors
SMD Type
Low VCE(sat) Transistor
2SD2098
SOT-89
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Low VCE(sat).
+0.1
4.00-0.1
Features
Excellent DC current gain characteristics.
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
1
NPN silicon transistor.
1. Base
0.40
+0.1
-0.1
+0.1
3.00-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
5
A
W
Collector power dissipation
PC
0.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
50
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
20
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6
V
Collector cutoff current
ICBO
VCB=40V
0.5
ìA
Emitter cutoff current
IEBO
VEB=5V
0.5
ìA
1.0
V
VCE(sat) IC=4 A, IB=0.1A
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=2V, IC=0.5A
0.3
120
390
VCE=6V, IE= -50mA, f=100MHz
150
MHz
VCB=20V, IE=0A, f=1MHz
30
pF
hFE Classification
DJ
Marking
Rank
Q
R
hFE
120 270
180 390
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