Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector to emitter saturation voltage VCE(sat). +0.15 0.50 -0.15 High forward current transfer ratio hFE which has satisfactory linearity. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SD1253 VCBO 2SD1253A Collector-emitter voltage 2SD1253 Rating Unit 60 V 80 V 60 V 80 V VEBO 5 V Collector current IC 4 A Peak collector current ICP 8 A VCEO 2SD1253A Emitter-base voltage Collector power dissipation Ta = 25 PC 1.3 W 40 Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SD1253,2SD1253A Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage 2SD1253 VCEO Testconditons IC = 30 mA, IB = 0 2SD1253A Base-emitter voltage VBE Collector-emitter cutoff current 2SD1253 ICES 2SD1253A Collector-emitter cutoff current 2SD1253 ICEO 2SD1253A Emitter-base cutoff current IEBO Forward current transfer ratio hFE Forward current transfer ratio Typ Max Unit 60 V 80 V VCE = 4 V, IC = 3 A 2 V VCE = 60 V, VBE = 0 400 ìA VCE = 80 V, VBE = 0 400 ìA VCE = 30 V, IB = 0 700 ìA VCE = 60 V, IB = 0 700 ìA VEB = 5 V, IC = 0 1 mA VCE = 4 V, IC = 1 A 40 VCE = 4 V, IC = 3 A 15 250 VCE(sat) IC = 4 A, IB = 0.4 A Collector-emitter saturation voltage 1.5 V VCE = 5 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC=4A 0.4 ìs Storage time tstg IB1=-IB2=0.4 A 1.2 ìs VCC=50V 0.5 ìs Transition frequency fT Fall time tf hFE Classification 2 Min Rank R Q P hFE 40 90 70 150 120 250 www.kexin.com.cn