Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A Collector power TC=25°C dissipation Ta=25°C 20 PC Junction temperature Tj Storage temperature Tstg 3.0±0.5 φ3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Collector cutoff current 2.9±0.2 W 2.0 ■ Electrical Characteristics 15.0±0.5 ● 4.6±0.2 9.9±0.3 High-speed switching High forward current transfer ratio hFE which has satisfactory linearity Dielectric breakdown voltage of the package: > 5kV 13.7±0.2 4.2±0.2 ● Conditions min typ max Unit ICBO VCB = 80V, IE = 0 100 µA ICEO VCE = 40V, IB = 0 100 µA 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 50 Forward current transfer ratio hFE * VCE = 4V, IC = 0.5A 500 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A 0.5 Base to emitter saturation voltage VBE(sat) Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz 75 MHz Turn-on time ton 0.3 µs Storage time tstg 3.5 µs Fall time tf 0.9 µs *h FE V 1500 0.7 V V IC = 1A, IB1 = 0.05A, IB2 = – 0.1A, VCC = 50V Rank classification Rank hFE P Q 800 to 1500 500 to 1000 1 Power Transistors 2SC5405 IC — VBE TC=25˚C VCE=4V TC=25˚C 5 0.8 Collector current IC (A) Collector current IC (A) VCE(sat) — IC 6 0.6 IB=0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4 0.4mA 0.3mA 0.2 4 3 2 1 0.2mA 0.1mA 0 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) hFE — IC Forward current transfer ratio hFE 10000 VCE=4V TC=25˚C 1000 100 10 1 0.01 0.1 1 10 Collector current IC (A) 2 100 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 1.0 100 IC/IB=40 TC=25˚C 10 1 0.1 0.01 0.01 0.1 1 Collector current IC (A) 10