KEXIN 2SD1760

Transistors
SMD Type
Medium Power Transistor
2SD1760
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65 -0.1
(IC = 2A, IB = 0.2A).
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Low VCE(sat), VCE(sat) = 0.5V (typical)
+0.15
0.50 -0.15
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
3
A
ICP
4.5
A
PC
15
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector current
Collector current (pulse) *
Collector power dissipation
Tc = 25
* Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
BVCBO
IC=50ìA
60
V
Collector-emitter voltage
BVCEO
IC=1mA
50
V
Emitter-base voltage
BVEBO
IE=50ìA
5
V
ICBO
VCB=40V
IEBO
VEB=4V
Collector cutoff current
Emitter cutoff current
VCE(sat) IC=2A,IB=0.2A
Collector-emitter saturation voltage
Forward current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
VCE=3V,IC=0.5A
0.5
82
1
ìA
1
ìA
1
V
390
VCE=5V, IE= -500mA, f=30MHz
90
MHz
VCB=10V, IE=0A, f=1MHz
40
pF
hFE Classification
Rank
P
Q
R
hFE
82 180
120 270
180 390
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