KEXIN 2SB1181

Transistors
SMD Type
Power Transistor
2SB1181
TO-252
Features
6.50
+0.2
5.30-0.2
Hight breakdown voltage and high current.
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low VCE(sat).
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-80
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Collector current pulse
ICP
-2
A
Collector power dissipation
PC
1
W
Collector power dissipation (Tc=25 )
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-80
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-80
V
Emitter-base breakdown voltage
BVEBO
IE=-50ìA
-5
V
Collector cutoff current
ICBO
VCB=-60V
-1
ìA
Emitter cutoff current
IEBO
VEB=-4V
-1
ìA
-0.4
V
VCE(sat) IC= -500mA, IB= -50mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
VCE= -3V, IC= -0.1A
82
390
VCE= -10V, IE=50mA, f=100MHz
100
MHz
VCB= -10V,IE=0A,f=1MHz
25
pF
hFE Classification
Rank
P
Q
R
hFE
82 180
120 270
180 390
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