Transistors SMD Type Power Transistor 2SB1181 TO-252 Features 6.50 +0.2 5.30-0.2 Hight breakdown voltage and high current. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Collector current pulse ICP -2 A Collector power dissipation PC 1 W Collector power dissipation (Tc=25 ) PC 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -80 V Collector-emitter breakdown voltage BVCEO IC=-1mA -80 V Emitter-base breakdown voltage BVEBO IE=-50ìA -5 V Collector cutoff current ICBO VCB=-60V -1 ìA Emitter cutoff current IEBO VEB=-4V -1 ìA -0.4 V VCE(sat) IC= -500mA, IB= -50mA Collector-emitter saturation voltage DC current transfer ratio hFE Transition frequency fT Output capacitance Cob VCE= -3V, IC= -0.1A 82 390 VCE= -10V, IE=50mA, f=100MHz 100 MHz VCB= -10V,IE=0A,f=1MHz 25 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1