Transistors IC SMD Type Power Transistor 2SD1757K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Optimal for muting. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 6.5 V Collector current * IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 30 V Collector-emitter breakdown voltage BVCEO IC=1mA 15 V Emitter-base breakdown voltage BVEBO IE=50ìA 6.5 V Collector cutoff current ICBO VCB=20V 0.5 ìA Emitter cutoff current IEBO VEB=4V 0.5 ìA 0.4 V VCE(sat) IC/IB=500mA/50mA Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=3V, IC=100mA 0.1 120 560 VCE=5V, IE= -50mA, f=100MHz 150 MHz VCB=10V, IE=0A, f=1MHz 15 pF hFE Classification AA Marking Rank Q R S hFE 120 270 180 390 270 560 www.kexin.com.cn 1