Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage.(BVCEO = 160V) +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High transition frequency.(fT = 80MHZ) +0.15 0.50 -0.15 Low collector output capacitance.Typ. 20pF at VCB = 10V 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V IC Collector current Collector power dissipation PC TC = 25 1.5 A(DC) 3 A(Pulse) * 1 W 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=200msec duty=1/2 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 50ìA 160 V Collector to emitter breakdown voltage V(BR)CEO IC = 1mA 160 V Emitter to base breakdown voltage V(BR)EBO IE = 50ìA 5 V Collector cutoff current ICBO VCB = 120V 1 ìA Emitter cutoff current IEBO VEB = 4V 1 ìA 2 V 1.5 V Collector to emitter saturation voltage * VCE(sat) IC/IB = 1A/0.1A Base to emitter voltage * VBE(sat) IC/IB = 1A/0.1A DC current transfer ratio hFE Transition frequency fT Output capacitance Cob VCE/IC = 5V/0.1A 120 390 VCE = 5V , IE = -0.1A , f = 30MHz 80 MHz VCB = 10V , IE = 0A , f = 1MHz 20 pF * Measured using pulse current. hFE Classification Rank Q R hFE 120 to 270 180 to 390 www.kexin.com.cn 1