Transistors SMD Type High-voltage Amplifier Transistor 2SC4102 Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA W Collector power dissipation PC 0.2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 120 V Collector-emitter breakdown voltage VCEO IC=1mA 120 V 5 Emitter-base breakdown voltage VEBO IE=50ìA Collector cutoff current ICBO VCB=100V 0.5 A Emitter cutoff current IEBO VEB=4V 0.5 A hFE VCE=6V, IC=2mA DC current transfer ratio V 180 560 VCE(sat) IC=10mA, IB=1mA Collector-emitter saturation voltage Output capacitance Cob Transition frequency fT 0.5 V VCB=12V, IE=0A, f=1MHz 2.5 pF VCE=-12V, IE= 2mA, f=100MHz 140 MHz hFE Classification Marking TR Rank hFE TS R 180 S 390 270 560 www.kexin.com.cn 1