Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency.(fT = 50MHZ) +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Typ. 30pF at VCB = 10V +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector output capacitance. 3 .8 0 High breakdown voltage.(BVCEO = -160V) 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO Collector current IC V A(DC) -3 A(Pulse) 1 PC Collector power dissipation -5 -1.5 10 Junction temperature Tj 150 Storage temperature Tstg ?55 to +150 W(Tc=25 ) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC = -50ìA -160 V Collector-emitter breakdown voltage BVCEO IC = -1mA -160 V Emitter-base breakdown voltage BVEBO IE = -50ìA -5 V Collector cutoff current ICBO VCB = -120V -1 ìA Emitter cutoff current IEBO VEB = -4V -1 ìA IC/IB = -1A/-0.1A -2 V Collector-emitter saturation voltage DC current transfer ratio VCE(sat) hFE Transition frequency fT Output capacitance Cob VCE = -5V , IC = -0.1A 82 180 VCE = -5V , IE = 0.1A , f = 30MHz 50 MHz VCB = -10V , IE =0A , f = 1MHz 30 pF hFE Classification TYPE P hFE 82 to 180 www.kexin.com.cn 1