Transistors IC SMD Type PNP General Purpose Transistors BCW67,BCW68 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High current gain. 0.55 For general AF applications. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BCW67 BCW68 Unit Collector-base voltage VCBO -45 -60 V Collector-emitter voltage VCEO -32 -45 V Emitter-base voltage VEBO -5 -5 V Collector current Peak collector current Base current Peak base current IC -800 mA ICM -1000 mA IB -100 mA IBM -200 mA mW Ptot 330 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS Total power dissipation,TS = 79 215 K/W www.kexin.com.cn 1 Transistors IC SMD Type BCW67,BCW68 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage BCW67 Testconditons V(BR)CEO IC = -10 mA, IB = 0 BCW68 BCW67 Collector-base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 BCW67 hFE-group B/G DC current gain * -20 VCB = -45 V, IE = 0 , TA = 150 -20 IEBO VEB = -4 V, IC = 0 -20 hFE IC = 100 ìA, VCE = 10 V 75 hFE IC = 10 mA, VCE = 1 V 120 100 160 250 160 250 400 250 350 630 hFE VCE(sat) VBE(sat) Transition frequency IC = -100 mA, VCE = -1 V fT IC = -100 mA, IB = -10 mA -0.3 IC = -500 mA, IB = -50 mA -0.7 IC = -100 mA, IB = -10 mA -1.25 IC = -500 mA, IB = -50 mA -2 IC = -50 mA, VCE = -5 V, f = 20 MHz 200 Collector-base capacitance Ccb VCB = -10 V, f = 1 MHz 6 Emitter-base capacitance Ceb VEB = -0.5 V, f = 1 MHz 60 * Pulse test: t 300ìs, D = 2%. hFE Classification BCW67 TYPE Rank A B C Marking DAs DBs DCs BCW68 TYPE Rank F G H Marking DFs DGs DHs www.kexin.com.cn nA 50 A/F * ìA 80 180 Collector-emitter saturation voltage * nA 35 C/H 2 V C/H hFE-group B/G Base-emitter saturation voltage -5 VCB = -32 V, IE = 0 , TA = 150 ICBO A/F hFE-group B/G V -20 C/H DC current gain * -45 VCB = -45 V, IE = 0 ICBO A/F DC current gain * Unit V -20 BCW68 Emitter cutoff current -32 VCB = -32 V, IE = 0 BCW68 Collector cutoff current Max -60 V(BR)EBO IE = -10ìA, IC = 0 BCW67 Typ -45 BCW68 Emitter-base breakdown voltage Min V MHz pF