KEXIN 2PB1219AR

Transistors
IC
SMD Type
PNP General Purpose Transistor
2PB1219A
Features
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Peak collector current
ICM
-1
A
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
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1
Transistors
IC
SMD Type
2PB1219A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cut-off current
ICBO
IE = 0; VCB = -20 V
Emitter cut-off current
IEBO
IC = 0; VEB = -4 V
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
hFE
IC = -150 mA; VCE = -10 V; *
Min
Typ
IE = 0; VCB = -20 V; Tj = 150
Unit
nA
-5
ìA
-100
nA
170
240
340
Collector-emitter saturation voltage
VCE(sat) IC = -300 mA; IB = -30 mA; *
-600
mV
Base-emitter saturation voltage
VBE(sat) IC = -300 mA; IB = -30 mA; *
-1.5
V
15
pF
Collector capacitance
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
2PB1219AQ
2PB1219AR
2PB1219AS
fT
IC = 50 mA; VCE = -10 V;f = 100 MHz;*
* Pulse test: tp
300 ìs; ä
0.02.
hFE Classification
2
85
120
170
Max
-100
TYPE
2PB1219AQ
2PB1219AR
2PB1219AS
Marking
DQ
DR
DS
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100
120
140
MHz