Transistors SMD Type PNP Silicon AF Transistors BCX69 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 For general AF applications. +0.1 4.00-0.1 Features High collector current. +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 Low collector-emitter saturation voltage. +0.1 0.44-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 High current gain. 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Peak collector current ICM 2 A IB 100 mA Peak base current Base current IBM 200 mA Total power dissipation Ptot 1 W Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Junction - soldering point RthJS 20 K/W www.kexin.com.cn 1 Transistors SMD Type BCX69 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Unit Collector-emitter breakdown voltage V(BR)CEO IC = 30 mA, IB = 0 20 V Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IB = 0 25 V Emitter-base breakdown voltage V(BR)EBO IE = 1 ìA, IC = 0 5 V Collector cutoff current ICBO DC current gain * hFE VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 IC = 5 mA, VCE = 10 V BCX69 DC current gain * BCX69-10 100 ìA 375 85 100 160 100 160 250 BCX69-25 160 250 375 hFE hFE IC = 500 mA, VCE = 1 V IC = 1A, VCE = 1V VCE(sat) IC = 1 A, IB = 100 mA Base-emitter voltage VBE(ON) IC = 5 mA, VCE = 10 V * 60 0.5 fT IC = 100 mA, VCE = 5 V, f = 20 MHz 300ìs, D = 2%. hFE Classification TYPE BCX69 BCX69-10 BCX69-16 BCX69-25 Marking CE CF CG CH V 0.6 IC = 1 A, VCE = 1 V Transition frequency www.kexin.com.cn nA 50 85 Collector-emitter saturation voltage * * Pulse test: t 100 BCX69-16 DC current gain * 2 Max 1 100 MHz