Transistors IC SMD Type Small Signal Transistor FMMT5088 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4.5 V Collector current IC 50 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IB=0 35 V Collector-emitter breakdown voltage * V(BR)CEO IC=100mA,IE=0* 30 V Collector-base cut-off current Emitter-base current ICBO VCB=20V, IE=0 IEBO VEB(off)=3V, IC=0 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA DC current gain hFE Current-gain-bandwidth product fT Output capacitance Cobo Emitter-base capacitance Cebo IC=100ìA, VCE=5V 300 IC=500mA, VCE=5V f=20MHz 50 50 nA 0.5 V 0.8 V 900 MHz 4 pF VBE=0.5V, f=1MHz, IC=0 10 pF 3 dB 1400 ns NF IC=200mA, VCE=5V, Rg=10KÙ, f=10Hz to 15KHz Small signal current transfer ratio hfe IC=1mA, VCE=5V f=1KHz 300 ìs; d nA VCB=5V, f=1MHz, IE=0 Noise figure * Pulse test: tp 50 350 0.02. Marking Marking 1Q www.kexin.com.cn 1