Transistors IC SMD Type Small Signal Transistor FMMT2484 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 60 Volt VCEO. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Peak collector current ICM 200 mA Collector current IC 50 mA Power dissipation Ptot 330 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10ìA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA,IC=0 6 V Collector cutoff current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage * VCB=45V,IE=0 10 nA VCB=45V,TamB=150 10 ìA VEB=5V,IC=0 10 nA 0.35 V 0.95 V VCE(sat) IC=1A,IB=100ìA Base-emitter voltage * VBE DC current gain * hFE IC=10ìA,VCE=5V Output capacitance Cobo VCB=5V,f=140KHz 6 pF Input capacitance Cibo Output capacitance * Pulse test: tp NF 300ìs; d IC=1A,VCE=5V 100 500 VBE=0.5V,f=140KHz 6 pF IC=200ìA, VCE=5V, Rg=2kÙ f=1kHz, f=200Hz 3 dB IC=200ìA, VCE=5V, Rg=2kÙ f=30Hz to 15kHz at -3dB points 3 dB 0.02. Marking Marking 4G www.kexin.com.cn 1