Transistors IC SMD Type High Perfromance Transistor FMMT451 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Amp continuous current. 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Ptot = 500mW. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Peak collector current ICM 2 A Collector current IC 1 A Base current IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 80 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 60 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector cutoff current ICBO Emitter cut-off current IEBO VCB=60V 0.1 ìA VEB=4V 0.1 ìA 0.35 V 1.1 V Collector-emitter saturation voltage * VCE(sat) IC=150mA,IB=15mA Base-emitter saturation voltage * VBE(sat) IC=150mA,IB=15mA Static Forward Current Transfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d IC=1A, VCE=10V 10 IC=150mA,VCE=10V 50 IC=50mA,VCE=10V,f=100MHz 150 VCB=10V,f=1MHz 150 MHz 15 pF 0.02. Marking Marking 451 www.kexin.com.cn 1