KEXIN FMMT451

Transistors
IC
SMD Type
High Perfromance Transistor
FMMT451
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1 Amp continuous current.
1
0.55
Low equivalent on-resistance.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Ptot = 500mW.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
5
V
Peak collector current
ICM
2
A
Collector current
IC
1
A
Base current
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
80
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
5
V
Collector cutoff current
ICBO
Emitter cut-off current
IEBO
VCB=60V
0.1
ìA
VEB=4V
0.1
ìA
0.35
V
1.1
V
Collector-emitter saturation voltage *
VCE(sat) IC=150mA,IB=15mA
Base-emitter saturation voltage *
VBE(sat) IC=150mA,IB=15mA
Static Forward Current Transfer Ratio *
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp
hFE
fT
Cobo
300 ìs; d
IC=1A, VCE=10V
10
IC=150mA,VCE=10V
50
IC=50mA,VCE=10V,f=100MHz
150
VCB=10V,f=1MHz
150
MHz
15
pF
0.02.
Marking
Marking
451
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