Transistors IC SMD Type Medium Power Transistor FMMT491 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Peak collector current ICM 2 A Collector current IC 1 A Power dissipation Ptot 500 mW Tj,Tstg -55 to +150 Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 80 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 60 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V Collector cutoff current ICBO VCB=60V Emitter cut-off current IEBO VEB=4V 100 nA 100 nA Collector-emitter saturation voltage * IC=500mA,IB=50mA VCE(sat) IC=1A,IB=100mA 0.25 0.50 V Base-emitter saturation voltage * VBE(sat) IC=1A,IB=100mA 1.1 V Base-emitter voltage * VBE(ON) IC=1A,VCE=5V 1.0 V Static Forward Current Transfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d IC=1mA,VCE=5V 100 IC=500mA,VCE=5V 100 IC=1A,VCE=5V 80 IC=2A,VCE=5V 30 IC=50mA,VCE=10V,f=100MHz 150 VCB=10V,f=1MHz 300 MHz 10 pF 0.02. Marking Marking 491 www.kexin.com.cn 1