Transistors SMD Type High Voltage Transistor FMMT593 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 PNP silicon planar 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V Peak collector current ICM -2 A Collector current IC -1 A Base current IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FMMT593 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -120 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -100 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-100V -100 nA Collector-Emitter Cut-Off Current ICES VCE=-100V -100 nA Emitter cut-off current IEBO VEB=-4V -100 nA IC=-250mA, IB=-25mA -0.2 V IC=-500mA, IB=-50mA -0.3 V Base-emitter saturation voltage * VBE(sat) IC=-500mA, IB=-50mA -1.1 V Base-emitter voltage * VBE(ON) IC=-1mA,VCE=-5V -1.0 V Collector-emitter saturation voltage * Static Forward Current Transfer Ratio Current-gain-bandwidth product Output capacitance Marking Marking VCE(sat) hFE fT Cobo * Pulse test: tp = 300 ìs; d 2 Testconditons 593 www.kexin.com.cn 0.02. IC=-1mA, VCE=-5V 100 IC=-250mA,VCE=-5V* 100 IC=-500mA, VCE=-5V* 100 IC=-1A, VCE=-5V, 50 IC=-50mA,VCE=-10V,f=100MHz 50 VCB=-10V,f=1MHz 300 MHz 5 pF