KEXIN FMMT593

Transistors
SMD Type
High Voltage Transistor
FMMT593
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
SOT23 PNP silicon planar
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICM
-2
A
Collector current
IC
-1
A
Base current
IB
-200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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1
Transistors
SMD Type
FMMT593
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-120
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-100
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
V
Collector cutoff current
ICBO
VCB=-100V
-100
nA
Collector-Emitter Cut-Off Current
ICES
VCE=-100V
-100
nA
Emitter cut-off current
IEBO
VEB=-4V
-100
nA
IC=-250mA, IB=-25mA
-0.2
V
IC=-500mA, IB=-50mA
-0.3
V
Base-emitter saturation voltage *
VBE(sat) IC=-500mA, IB=-50mA
-1.1
V
Base-emitter voltage *
VBE(ON) IC=-1mA,VCE=-5V
-1.0
V
Collector-emitter saturation voltage *
Static Forward Current Transfer Ratio
Current-gain-bandwidth product
Output capacitance
Marking
Marking
VCE(sat)
hFE
fT
Cobo
* Pulse test: tp = 300 ìs; d
2
Testconditons
593
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0.02.
IC=-1mA, VCE=-5V
100
IC=-250mA,VCE=-5V*
100
IC=-500mA, VCE=-5V*
100
IC=-1A, VCE=-5V,
50
IC=-50mA,VCE=-10V,f=100MHz
50
VCB=-10V,f=1MHz
300
MHz
5
pF