KEXIN FZT753

Transistors
SMD Type
PNP Silicon Planar Medium Power Transistor
FZT753
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
Low saturation voltage
+0.1
3.00-0.1
Excellent hFE specified up to 2A
+0.15
1.65-0.15
+0.2
3.50-0.2
6.50
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
4.6
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-Base Voltage
Parameter
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-2
A
Ptot
2
W
Tj:Tstg
-55 to +150
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
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1
Transistors
SMD Type
FZT753
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Symbol
Testconditons
Typ.
Max
Unit
V(BR)CBO
IC=-100ìA
-120
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA*
-100
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-100ìA
-5
V
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
IEBO
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
ton
Switching Times
VCB=-100V
-0.1
ìA
VCB=-100V,Tamb=100
-10
ìA
VEB=-4V
-0.1
ìA
IC=-1A, IB=-100mA*
-0.17
-0.3
V
IC=-2A, IB=-200mA*
-0.30
-0.5
V
IC=-1A, IB=-100mA*
-0.9
-1.25
V
-0.8
-1.0
V
IC=-1A, VCE=-2V*
IC=-50mA, VCE =-2V*
70
200
IC=-500mA, VCE =-2V*
100
200
IC=-1A, VCE =-2V*
55
170
IC=-2A, VCE =-2V*
25
55
IC=-100mA, VCE=-5V,f=100MHz
100
140
VCB =-10V f=1MHz
IC=-500mA, VCC =-10V,IB1=IB2=-50mA
toff
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
2
Min
Collector-Base Breakdown Voltage
FZT753
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300
MHz
30
pF
40
ns
600
ns