TYSEMI FZT657

Transistors
SMD Type
Product specification
FZT657
SOT-223
Unit: mm
+0.2
3.50-0.2
6.50
Features
+0.1
3.00-0.1
Low saturation voltage
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
1
2 Collector
3
2
+0.1
0.70-0.1
2.9
3 Emitter
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
0.5
A
Power Dissipation at Tamb=25
Ptot
2
W
Tj:Tstg
-55 to +150
Operating and Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ.
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100ìA
300
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA*
300
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100ìA
5
V
ICBO
VCB=200V
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
0.1
ìA
VEB=3V
0.1
ìA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA*
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=10mA*
1.0
V
Base-Emitter Turn-On Voltage
VBE(on)
IC=100mA, VCE =5V*
1.0
V
Static Forward Current Transfer Ratio
hFE
Transition Frequency
fT
Output Capacitance
Cobo
IC=10mA, VCE =5V*
40
IC=100mA, VCE =5V*
50
IC=10mA, VCE =20V,f=20MHz
30
VCB =20V, f=1MHz
MHz
20
pF
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT657
http://www.twtysemi.com
[email protected]
4008-318-123
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